Method of fabricating capacitor or contact for semiconductor device by forming uneven oxide film and reacting silicon with metal containing gas

ABSTRACT

A method of the invention for fabricating a semiconductor device includes the steps of: forming an oxide film having a non-uniform thickness on silicon; reducing at least a portion of the oxide film using gas containing a metal element, and growing a metal film containing the metal element on the silicon by reacting an exposed surface of the silicon with the gas; and removing the metal film.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a method of fabricating a semiconductordevice, and more particularly to a method by which a surface area of asilicon material used in a semiconductor device is increased.

2. Description of the Related Art

A silicon film is widely used as a charge storage electrode for acapacitor used in a semiconductor device, such as a capacitor of astacked-type memory cell used in a dynamic random access memory (DRAM).In order to realize a highly-integrated semiconductor device by reducingthe size of each memory cell, it is necessary to reduce the size of eachcapacitor without decreasing the capacitance of the capacitor.Accordingly, some techniques for increasing an area of a charge storageelectrode for a capacitor, i.e., a surface area of a silicon film aresuggested.

In some conventional semiconductor devices, when a silicon film isdeposited by chemical vapor deposition (CVD), a surface of the siliconfilm is made uneven by adjusting the deposition temperature, whereby anarea of an electrode for a capacitor is increased. One example of suchconventional semiconductor devices is disclosed in H. Watanabe et al.,Sym. on VLSI Tech. page 873 (1990). FIG. 7 is a graph showing therelationship between a deposition temperature of a non-doped siliconfilm and a capacitance of a capacitor which has the deposited non-dopedsilicon film as a charge storage electrode. As can be seen from FIG. 7that the surface area of the non-doped silicon film is remarkablyincreased when the deposition temperature is within plus or minus 0.4°C. centered at 550° C.

However, according to the above prior art technique, the depositiontemperature suitable for increasing the surface area of the silicon filmfalls within a narrow range, i.e., within plus or minus 0.4° C. centeredat 550° C. Accordingly, at a temperature out of the range, the surfaceof the silicon film is not made largely uneven. It is difficult toadjust the deposition temperature within such a narrow range. The degreeof unevenness formed at the surface of the silicon film varies dependingon the concentration of impurities contained in the deposited siliconfilm. For the above reasons, the prior art technique has a problem inthat a capacitance of a capacitor cannot be increased with goodreproducibility.

SUMMARY OF THE INVENTION

The method of fabricating a semiconductor device of this inventionincludes the steps of: forming an oxide film having a non-uniformthickness on silicon; reducing at least a portion of the oxide filmusing gas containing a metal element, and growing a metal filmcontaining the metal element on the silicon by reacting an exposedsurface of the silicon with the gas; and removing the metal film.

Alternatively, a method of fabricating a semiconductor device of thepresent invention includes the steps of: forming an oxide film having anon-uniform thickness on silicon; reducing at least a portion of theoxide film using gas containing a metal element, and growing a metalfilm containing the metal element on the silicon by reacting an exposedsurface of the silicon with the gas; forming a capacitive insulatingfilm on the metal film; and depositing a conductive film on thecapacitive insulating film to form a capacitor which includes thesilicon, the metal film, the capacitive insulating film and theconductive film.

Alternatively, a method of fabricating a semiconductor device of thepresent invention includes the steps of: depositing a metal film onsilicon; intruding part of the metal film into silicon by annealing at atemperature equal to or lower than the melting point of the metal film;and removing the metal film.

Alternatively, a method of fabricating a semiconductor device of theinvention includes the steps of: depositing, on silicon, a metal filmcontaining a material at a concentration equal to or more than a maximumconcentration allowed by a solid solubility at a certain temperature;precipitating the material on the silicon by annealing at the certaintemperature; and removing the metal film.

Alternatively, a method of fabricating a semiconductor device of thepresent invention includes the steps of: forming an oxide film having anon-uniform thickness on silicon; reducing at least a portion of theoxide film using gas, and growing a dielectric film on the silicon byreacting an exposed surface of the silicon with the gas; and depositinga conductive film on the dielectric film to form a capacitor whichincludes the silicon, the dielectric film and the conductive film.

Thus, the invention described herein makes possible the advantage ofproviding a method of fabricating a semiconductor device in which asurface area of a silicon material can be easily increased with goodreproducibility.

This and other advantages of the present invention will become apparentto those skilled in the art upon reading and understanding the followingdetailed description with reference to the accompanying figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are cross sectional views illustrating process steps in amethod of fabricating a semiconductor device according to the presentinvention.

FIGS. 2A to 2C are cross sectional views illustrating process steps inanother method of fabricating a semiconductor device according to thepresent invention.

FIGS. 3A to 3C are cross sectional views illustrating process steps instill another method of fabricating a semiconductor device according tothe present invention.

FIGS. 4A to 4E are cross sectional views illustrating process steps instill another method of fabricating a semiconductor device according tothe present invention.

FIGS. 5A to 5E are cross sectional views illustrating process steps instill another method of fabricating a semiconductor device according tothe present invention.

FIGS. 6A to 6D are cross sectional views illustrating process steps instill another method of fabricating a semiconductor device according tothe present invention.

FIG. 7 is a graph showing a relationship between a depositiontemperature for depositing a silicon film and a surface area of theresulting silicon film.

FIGS. 8A to 8C are cross sectional views of process steps illustrating asilicon precipitation phenomenon which occurs as a result of anannealing step in a method of fabricating a semiconductor deviceaccording to the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring to FIGS. 1A through 1C, a method of fabricating asemiconductor device of the present invention will now be described.

First, a polycrystalline silicon film 12 is deposited on a substrate 11by low pressured CVD, and then the substrate 11 is immersed in a mixedsolution of an aqueous hydrogen peroxide solution and a sulfuric acid(about 130° C.). The term "polycrystalline silicon" is hereinafterreferred to as "polysilicon". As a result of the immersion, as is shownin FIG. 1A, the surface of the polysilicon film 12 is oxidized by themixed solution and hence a thin silicon oxide film 13 is formed on thepolysilicon film 12.

The polysilicon film 12 which is formed by low pressure CVD is composedof a number of columnar crystal grains. Between respective crystalgrains, there exist grain boundaries where impurities are likely to beprecipitated. As a result, the oxidation rate at the surface of thepolysilicon film 12 varies from position to position at the surface.Therefore, the thickness of the resulting thin silicon oxide film 13 isnot uniform, and the silicon oxide film 13 may be a porous film. Thethickness of the silicon oxide film 13 is preferably in the range of 10angstroms to 50 angstroms.

Even if the surface of the polysilicon film 12 is not immersed in themixed solution of the aqueous hydrogen peroxide solution and thesulfuric acid (about 130° C.), a native oxide film is formed at thesurface of the polysilicon film 12 by the contact with the atmosphericair. However, by performing a step for oxidizing the surface of thepolysilicon film 12 using the mixed solution of the aqueous hydrogenperoxide solution and the sulfuric acid, the silicon oxide film 13having the non-uniform thickness can be formed with goodreproducibility. In the step for forming the silicon oxide film 13, anoxidizing solution or an oxidizing gas may be used other than the mixedsolution of the aqueous hydrogen peroxide solution and the sulfuricacid. For example, a wet oxidation method, or a dry oxidation method maybe applied. Alternatively, without performing the step for forming thesilicon oxide film 13, a native oxide film which is formed by thecontact of the polysilicon film 12 with the atmospheric air for anappropriate time period at a room temperature or more may be used as thesilicon oxide film 13.

Next, the substrate 11 is positioned in a tungsten hexafluoride (WF₆)gas of 10 sccm (standard cubic centimeters per minute) which is dilutedby an argon (Ar) gas of 100 sccm. The temperature of the gas is set inthe range of 250° C. to 300° C., and the pressure is set at 250 mTorr(millitorr). Under the above conditions, as is shown in FIG. 1B, atungsten film 14 grows on the polysilicon film 12. The growth occurs dueto a reaction represented by the following chemical equation.

    2WF.sub.6 +3Si→2W+3SiF.sub.4 ↑

The above reaction starts when the polysilicon film 12 comes intocontact with the gas through holes which are formed by reducing at leasta portion of the silicon oxide film 13 with the gas or the holes whichare inherently formed in the porous silicon oxide film 13. As describedabove, the thickness of the silicon oxide film 13 is not uniform.Therefore, the surface of the polysilicon film 12 locally comes intocontact with the gas, when relatively thin portions of the silicon oxidefilm 13 (portions having a thickness of about 20 angstroms or less) arereduced and removed completely within a certain period of time(relatively short time), or when the gas passes through the relativelythin portions. As a result of the contact, the gas reacts with thesurface of the polysilicon film 12, whereby tungsten grows unevenly onthe polysilicon film 12. With the progress of the reaction, silicon isvolatilized as SiF₄ from the surface of the polysilicon film 12. On theother hand, since relatively thick portions of the silicon oxide film 13are not reduced and removed completely within the certain period oftime, the gas cannot pass through the relatively thick portions.Therefore, tungsten does not grow on portions of the polysilicon film 12which are covered with the relatively thick portions of the siliconoxide film 13. The above fact is reported in M. L. Green et al., J.Electrochem. Soc. Vol. 134, No. 9, Page 2285(1987). Due to the localgrowth (the reaction with silicon) of the tungsten film 14, an interface15 between the polysilicon film 12 and the tungsten film 14 is madeuneven, as is shown in FIG. 1B. Recessed portions are the portions wheretungsten grows due to the reaction of the gas with the polysilicon film12. In order to form such unevenness, instead of the growth of thetungsten film 14, another metal film may be caused to grow due to areaction similar to the reaction represented by the above chemicalequation. For example, if gas such as MoF₅, MoCl₃, TiCl₄, or TaCl₅ isused, it is possible to unevenly grow a molybdenum film, a titaniumfilm, or a tantalum film on silicon.

The metal film will be removed after the growth. Therefore, a film madeof a material other than metals may be caused to grow instead of themetal film as far as the film can grow due to the reaction with silicon.

According to this example, a difference in level of the unevenness atthe interface 15 may approximately be from 50 nm (nanometer) to 150 nm.

Next, the tungsten film 14 is selectively removed by wet etching with amixed solution of an aqueous hydrogen peroxide solution and a sulfuricacid (130° C.). Thus, the polysilicon film 12 having an increasedsurface area as a result of the growth step of the tungsten film 14 canbe obtained. For selectively removing the tungsten film 14, a solutionother than the mixed solution of the aqueous hydrogen peroxide solutionand the sulfuric acid can be used.

According to this example, the surface area of the polysilicon film 12after the removal of the tungsten film 14 is 1.6 times as large as thesurface area of the polysilicon film 12 directly after the deposition.According to this example, by controlling the formation conditions ofthe silicon oxide film 13 and the growth conditions of the tungsten film14, the surface area of the polysilicon film 12 can be enlarged by about1.2 to 1.6 times.

According to the method of the present invention, not only the surfacearea of the polysilicon film 12 but also a surface area of a singlecrystalline silicon substrate or film, or a surface area of an amorphoussilicon film can be increased. The single crystalline silicon substrateand film and the amorphous silicon film have uneven surfaces but theunevenness degree is lower than that of the surface of the polysiliconfilm 12. However, by an oxidation process using an oxidizing solution,the silicon oxide film 13 having sufficiently non-uniform thickness canbe formed, whereby the surface area thereof can be sufficientlyincreased.

Secondly, an example in which a charge storage electrode for a capacitorin a memory cell of a semiconductor memory device is formed according tothe method of the present invention will be described with reference toFIGS. 2A to 2C. For simplification, only a stacked-type capacitor in acertain single memory cell is shown in FIGS. 2A to 2C. Elements otherthan the capacitor such as a transistor and interconnections areomitted. The formation of the elements other than the capacitor isperformed using known techniques.

First, as is shown in FIG. 2A, an insulating film 22 is formed on asilicon substrate 21 by CVD so as to cover a transistor (not shown).Then, an opening is formed at a predetermined region of the insulatingfilm 22 by lithography and etching techinques. The opening is used forconnecting a charge storage electrode 23 of the capacitor to the siliconsubstrate 21. A phosphorus-doped (P-doped) polysilicon film is depositedon the insulating film 22 so as to come into contact with the siliconsubstrate 21 via the opening. Thereafter, the polysilicon film ispatterned by the lithography and etching techniques so as to form thecharge storage electrode 23. The charge storage electrode 23 is incontact with the silicon substrate 21 via the opening in the insulatingfilm 22, as is shown in FIG. 2A. More precisely, the charge storageelectrode 23 is electrically connected to an impurity diffused region(not shown) which is formed on a surface of the silicon substrate 21.The impurity diffused region is electrically connected to one ofsource/drain regions of a switching transistor (not shown), or functionsas either source or drain.

Next, a silicon oxide film 24 is formed on the surface of the chargestorage electrode 23 in the same manner as in the first example.Thereafter, a tungsten film 25 is grown in the same manner as in thefirst example, so as to make an interface 26 uneven, as is shown in FIG.2B. Then, the tungsten film 25 is removed. As a result, the chargestorage electrode 23 having an increased surface area can be obtained.

Next, using a known method, a capacitive insulating film 27 is depositedon the charge storage electrode 23 and then a plate electrode 28 isformed, whereby a capacitor which is constituted by the charge storageelectrode 23, the capacitive insulating film 27, and the plate electrode28 is formed. As the capacitive insulating film 27, a silicon oxide filmwhich is formed by oxidizing the surface of the charge storage electrode23 of silicon, or an ONO film including such oxide films and a nitridefilm may be used.

The charge storage electrode 23 of the thus formed capacitor has anincreased surface area as compared with the prior art. As a result, thecapacitance of the capacitor also increases in proportion to theincreased degree of the surface area. Therefore, when a capacitor in amemory cell of a DRAM is formed in accordance with the method of thisexample, a memory cell having a desired charge storage electrode andhaving a reduced size can be provided.

Among the capacitors which are formed in accordance with the method ofthe present invention, a capacitor having a size of 3 μm² and having a 6nm thick ONO film as the capacitive insulating film 27 has a capacitanceof 26.7 fF (femtofarad). On the other hand, a capacitor having the samesize which is formed by a conventional method has a capacitance of 17.3fF. The above increase in capacitance is considered to be caused by theincrease in the surface area of the charge storage electrode 23 by about1.6 times.

In the method of this example, after the removal of the tungsten film25, the capacitive insulating film 27 is formed on the charge storageelectrode 23 of silicon. Alternatively, without removing the tungstenfilm 25, the capacitive insulating film 27 may be deposited directly onthe tungsten film 25. When the tungsten film is grown by the method ofthis example, the unevenness degree of the surface of the charge storageelectrode 23 of silicon is increased due to the uneven growth. Also, theunevenness degree of the surface of the tungsten film 25 is increased.Therefore, if the capacitive insulating film 27 is formed directly onthe tungsten film 25, a capacitance which is equal to or larger than thecapacitance of the capacitor formed by the method of the above examplecan be attained. For example, a Ta₂ O₅ film which is made of one of highdielectric materials may be formed on the tungsten film 25 as thecapacitive insulating film 27. In such a case where the tungsten film 25is not removed, the presence of the tungsten film 25 prevents the directcontact of the capacitive insulating film 27 with the charge storageelectrode 23 of silicon, whereby the dielectric material which may reactwith silicon can be used as the material of the capacitive insulatingfilm 27.

Now, an example in which the present invention is applied to theformation of a contact.

Generally, a contact resistance varies in inverse proportion to an areaof the contact interface. Accordingly, if the unevenness degree of thecontact interface can be increased and hence the contact area can besubstantially increased, the contact resistance can be reduced while anopening area of a contact hole is maintained constant. Hereinafter, themethod will be described with reference to FIGS. 3A to 3C.

First, as is shown in FIG. 3A, a P-doped polysilicon interconnection 32is formed on a substrate 31. Between the substrate 31 and thepolysilicon interconnection 32, an insulating film (not shown) isprovided. Then, after an interlevel insulating film 33 is formed so asto cover the polysilicon interconnection 32, a contact hole 34 is formedin the interlevel insulating film 33. Thereafter, a tungsten film 35 iscaused to grow on a portion of the surface of the polysiliconinterconnection 32 which is exposed at the bottom of the contact hole34. As is shown in FIG. 3B, the tungsten film 35 is not grown on theinterlevel insulating film 33, but is selectively grown only on thepolysilicon interconnection 32.

Next, after the tungsten film 35 is removed, as is shown in FIG. 3C, anAl (aluminum) interconnection 36 is formed on the interlevel insulatingfilm 33, whereby an electric contact of the Al interconnection 36 withthe polysilicon interconnection 32 is realized.

Thus, since the unevenness degree of the polysilicon interconnection 32is increased, the surface area of the polysilicon interconnection 32 isincreased by 1.6 times as compared with the prior art described above.As a result, the contact resistance is reduced down to 1/1.6.

If, after the unevenness degree of the contact region of the polysiliconinterconnection 32 is increased, impurity ions are implanted through thecontact hole 34, the contact resistance can be further reduced.

As described above, according to this example, the contact resistancecan be reduced without decreasing the opening area of the contact hole34.

Referring to FIGS. 4A to 4E, another example of the present inventionwill be described. First, as is shown in FIG. 4A, an insulating film 42is formed on a silicon substrate 41 so as to cover a transistor (notshown), and then an opening is formed in a predetermined portion of theinsulating film 42 by the lithography and etching techniques. Theopening is used for connecting a charge storage electrode 43 of acapacitor to the silicon substrate 41. After a P-doped polysilicon filmis deposited on the insulating film 42 so as to come into contact withthe silicon substrate 41 via the opening, the polysilicon film ispatterned by the lithography and etching techniques, so as to form thecharge storage electrode 43. The charge storage electrode 43 is incontact with the silicon substrate 41 via the opening in the insulatingfilm 42, as is shown in FIG. 4B. More precisely, the storage electrode43 is electrically connected to an impurity diffused region (not shown)which is formed at the surface of the silicon substrate 41. The impuritydiffused region is electrically connected to one of source/drain regionsof a switching transistor, or functions as either source or drain.

Next, as is shown in FIG. 4C, a pure Al film 44 is formed on theinsulating film 42 by sputtering so as to cover the charge storageelectrode 43.

An annealing step is performed at a temperature which is equal to orlower than a melting point of the pure Al film 44, for example, at 450°C. As a result, the surface of the charge storage electrode 43 isnon-uniformly reacted with the pure Al film 44, whereby the unevennessdegree at the interface between the charge storage electrode 43 and thepure Al film 44 is increased.

A solid solubility of silicon in aluminum (hereinafter, referred tosimply as "a solid solubility") varies depending on the temperature. Inthe annealing step, silicon is dissolved (diffused) into aluminum untilthe solid solubility at the annealing temperature is satisfied in thevicinity of the interface between aluminum and silicon. Aluminum isdissolved (diffused) into silicon. Thus, materials are mutually movedbetween aluminum and silicon. As a result the thermodynamic materialmovement occurs nonuniformly at the interface and the unevenness degreeat the interface is increased. If aluminum contains sufficient silicon,for example, if aluminum previously contains silicon at the maximumconcentration allowed by the solid solubility at the annealingtemperature, the above material movement is difficult to occur.Therefore, it is necessary for the Al film to contain silicon at aconcentration lower than the maximum concentration allowed by the solidsolubility at the annealing temperature. As far as the siliconconcentration in the Al film is lower than the maximum concentrationallowed by the solid solubility at the annealing temperature, a materialother than aluminum, for example an aluminum alloy containing copper,scandium, etc. can be used.

After the annealing step, the pure Al film 44 is selectively removedusing a mixed solution of a phosphoric acid and an acetic acid. As faras aluminum can be selectively etched with respect to silicon, anothersolution or gas may used as the etchant. Thereafter, a capacitiveinsulating film 46 is deposited on the charge storage electrode 43 in aconventional manner. Then, a plate electrode 47 is formed, so as to forma capacitor which is constituted by the charge storage electrode 43, thecapacitive insulating film 46 and the plate electrode 47.

The charge storage electrode 43 of the thus formed capacitor has anincreased surface area as compared with the prior art. Accordingly, thecapacitance of the capacitor is also increased in proportion to theincrease in surface area. Therefore, when a capacitor of a memory cellin a DRAM is formed in accordance with the method of this example, amemory cell having a desired charge storage electrode and having areduced size can be provided.

In the above example, the pure Al film 44 is formed after thepolysilicon film is patterned to form the charge storage electrode 43.Alternatively, the pure Al film 44 may be formed on the polysilicon filmbefore the polysilicon film is patterned. In this case, after theannealing step and the removal step of the Al film, the polysilicon filmhaving the uneven top face is patterned, so as to form the chargestorage electrode 43.

According to this example, it is unnecessary to use a CVD apparatus forgrowing a metal film, for example, the tungsten film, on silicon. An Alsputter apparatus which is introduced in the production line as asemiconductor fabricating apparatus can be used.

Now, another method in which the unevenness degree of the surface ofsilicon is increased by precipitation of materials contained in aluminumon silicon, instead of by the diffusion between aluminum and silicon,will be described.

First, as is shown in FIG. 5A, an insulating film 52 is formed on asilicon substrate 51 so as to cover a transistor (not shown). Then, anopening is formed in a predetermined portion of the insulating film 52by the lithography and etching techniques. The opening is used forconnecting a charge storage electrode 53 of a capacitor which will beformed later to the silicon substrate 51. After a P-doped polysiliconfilm is deposited on the insulating film 52 so as to come into contactwith the silicon substrate 51 via the opening, the polysilicon film ispatterned by the lithography and etching techniques, so as to form thecharge storage electrode 53. The charge storage electrode 53 is incontact with the silicon substrate 51 via the opening in the insulatingfilm 52. More precisely, the charge storage electrode 53 is electricallyconnected to an impurity diffused region (not shown) which is formed atthe surface of the silicon substrate 51. The impurity diffused region iselectrically connected to one of source/drain regions of a switchingtransistor, or functions as either source or drain.

Next, as is shown in FIG. 5C, an Al film 54 containing silicon of 10percentage by weight is formed above the insulating film 52 bysputtering so as to cover the charge storage electrode 53. The Al film54 contains silicon at a concentration which exceeds the maximumconcentration allowed by the solid solubility at 450° C.

Next, an annealing step is performed at a temperature which is equal toor lower than a melting point of the Al film 54, for example, at 450° C.As a result of the annealing step, silicon is precipitated on thesurface of the charge storage electrode 53 from the Al film 54.Hereinafter, the silicon precipitation phenomenon is described in moredetail with reference to FIGS. 8A to 8C. FIG. 8A is a cross sectionalview showing a semiconductor device before the annealing step. Thisfigure corresponds to FIG. 5B, and silicon which is contained in the Alfilm 54 is schematically shown in FIG. 8A. In the annealing step, as isshown in FIG. 8B, part of the silicon which is contained in the Al film54 epitaxially grows on a portion where precipitation cores are formedon the surface of the charge storage electrode 53. Thus, theprecipitation of silicon, i.e., the growth of silicon precipitates 55non-uniformly occurs on the charge storage electrode 53. After theannealing step, as is shown in FIG. 8C, a number of silicon precipitates55 are formed, whereby the charge storage electrode 53 having anincreased surface area can be obtained. The height of each of thesilicon precipitates 55 corresponds to the thickness of the deposited Alfilm 54.

Next, the Al film 54 is selectively removed using a mixed solution of aphosphoric acid and an acetic acid at about 60° C. so as to leave thesilicon precipitates 55. As far as Al can be selectively etched withrespect to silicon, another solution or gas can be used as the etchant.Thus, as is shown in FIG. 5D, the charge storage electrode 53 which hasan increased surface area due to the plurality of silicon precipitates55 (hereinafter, the silicon precipitate 55 and the charge storageelectrode 53 are sometimes referred to collectively as "the chargestorage electrode 53).

The formation of the silicon precipitates 55 occurs when the Al film 54contains, at least silicon at a concentration which exceeds the maximumconcentration allowed by the solid solubility at the annealingtemperature. The precipitation can occur even if a material other thansilicon is used. For example, when the A1 film 54 contains germanium ata concentration which exceeds the maximum concentration allowed by thesolid solubility at the annealing temperature, germanium precipitatesare formed on the charge storage electrode 53, whereby the surface areaof the charge storage electrode 53 is increased. Alternatively, the Alfilm 54 may be an alloy film which contains a material such as copper orscandium which is not precipitated. In order to give conductivity to thesilicon precipitates 55, impurities are doped into the siliconprecipitates 55. It is preferred that the impurities are the same asthose which have been doped in the charge storage electrode 53.Preferably, the doping is performed by ion implantation, before the Alfilm 54 is removed by etching or after the Al film 54 is removed.

Then, after a capacitive insulating film 56 is deposited on the chargestorage electrode 53 by a conventional method, a plate electrode 57 isformed. Thus, a capacitor which is constituted by the charge storageelectrode 53, the capacitive insulating film 56, and the plate electrode57 is formed.

Hereinafter, a method for forming a contact will be described withreference to FIGS. 6A to 6D.

First, as is shown in FIG. 6A, a P-doped polysilicon interconnection 62is formed on a substrate 61. Between the substrate 61 and thepolysilicon interconnection 62, an insulating film (not shown) isprovided. Then, after an interlevel insulating film 63 is formed so asto cover the polysilicon interconnection 62, a contact hole 64 is formedin the interlevel insulating film 63. Thereafter, an Al film 65 isdeposited on the interlevel insulating film 63 so as to come intocontact with a portion of the surface of the polysilicon interconnection62 which is exposed at the bottom of the contact hole 64 (FIG. 6B).

Then, as is shown in FIG. 6C, the Al film 65 is removed so that thecontact face having an increased surface area is exposed. Thereafter, asis shown in FIG. 6D, a barrier metal film 67 and an Al alloy film 68 areformed on the interlevel insulating film 63, whereby interconnectionsconstituted by the films 67 and 68 are formed.

If impurity ions are implanted through the contact hole 64 after theunevenness degree of the contact portion of the polysiliconinterconnection 62 is increased, the contact resistance can be furtherreduced.

According to the present invention, the surface of a silicon film can bereadily be made greatly uneven without adjusting the depositiontemperature of the silicon film within a narrow range. Furthermore, thedegree of the surface unevenness does not depend on the impurityconcentration in silicon. Thus, by the method according to the presentinvention, the surface area of the charge storage electrode can beincreased and the capacitance of the capacitor can be increased withgood reproducibility. Moreover, an area of the contact interface issubstantially increased without increasing the opening area of thecontact hole, whereby the contact resistance can be reduced.

Various other modifications will be apparent to and can be readily madeby those skilled in the art without departing from the scope and spiritof this invention. Accordingly, it is not intended that the scope of theclaims appended hereto be limited to the description as set forthherein, but rather that the claims be broadly construed.

What is claimed is:
 1. A method of fabricating a semiconductor device,the method comprising the steps of:oxidizing a surface of silicon usingan oxidizing solution to form an oxide film having a non-uniformthickness on said surface of said silicon, said non-uniform thickness ofsaid oxide film being in the range of from 10 to 50 angstroms; reducingat least a portion of said oxide film to expose a portion of saidsilicon surface using gas containing a metal element, and growing ametal film containing said metal element on said surface of said siliconby reacting said exposed portion of said surface of said silicon withsaid gas, said metal film growing with positional non-uniformity ofthickness; and removing said metal film.
 2. A method according to claim1, wherein a tungsten film is grown as said metal film by using gascontaining WF₆.
 3. A method according to claim 1, said method furthercomprising the steps of:forming a capacitive insulating film on saidsurface of said silicon after said step of removing said metal film; anddepositing a conductive film on said capacitive insulating film to forma capacitor which includes said surface of said silicon, said capacitiveinsulating film and said conductive film.
 4. A method of forming acontact on a silicon surface comprising the steps of:forming aninsulating film which covers said silicon surface; forming a contacthole in said insulating film for exposing a portion of said siliconsurface; oxidizing said exposed portion of said silicon surface to forman oxide film having a non-uniform thickness on said exposed portion ofsaid silicon surface, said non-uniform thickness of said oxide filmbeing in the range of from 10 to 50 angstroms; reducing at least aportion of said oxide film using gas containing a metal element, andgrowing a metal film on said exposed portion of said silicon surface,said metal film growing with positional non-uniformity of thickness;removing said metal film; and forming a conductive material on saidportion of said silicon surface which is exposed through said contacthole, thus electrically connecting said silicon surface to saidconductive material.
 5. A method of fabricating a semiconductor device,the method comprising the steps of:oxidizing a surface of silicon usingan oxidizing solution to form an oxide film having a non-uniformthickness on said surface of said silicon, said non-uniform thickness ofsaid oxide film being in a range from 10 to 50 angstroms; reducing atleast a portion of said oxide film to expose a portion of said siliconsurface using gas containing a metal element, and growing a metal filmcontaining said metal element on said surface of said silicon byreacting said exposed portion of said surface of said silicon with saidgas, said metal film growing with positional non-uniformity ofthickness; forming a capacitive insulating film on said metal film; anddepositing a conductive film on said capacitive insulating film to forma capacitor which includes said surface of said silicon, said metalfilm, said capacitive insulating film and said conductive film.
 6. Amethod according to claim 5, wherein said capacitive insulating film isa Ta₂ O₅ film.